Inzwa yoxinzelelo lwe-injini 2CP3-68 1946725 yeCarter excavator

Indlela yokulungiselela inzwa yoxinzelelo, ebonakaliswa ngokubandakanya la manyathelo alandelayo:

I-S1, ukubonelela nge-wafer enomqolo ongemuva kunye nomgangatho ongaphambili; Ukwenza umcu we-piezoresistive kunye nommandla wokudibanisa owenziwe kakhulu kumphezulu ongaphambili we-wafer; Ukwenza i-cavity enzulu yoxinzelelo ngokufaka umphezulu womva we-wafer;

I-S2, idibanisa iphepha lokuxhasa ngasemva kwe-wafer;

I-S3, ukuvelisa imingxuma yokukhokela kunye neengcingo zetsimbi kwicala langaphambili le-wafer, kunye nokudibanisa imicu ye-piezoresistive ukwenza ibhulorho ye-Wheatstone;

I-S4, ukubeka kunye nokwenza umaleko wokugqitha kumphezulu ongaphambili we-wafer, kunye nokuvula inxalenye yomgca wokudlula ukwenza indawo yentsimbi. 2. Indlela yokuvelisa inzwa yoxinzelelo ngokwebango le-1, apho i-S1 iquka ngokuthe ngqo la manyathelo alandelayo: I-S11: ukubonelela nge-wafer nge-background kunye ne-front surface, kunye nokuchaza ubukhulu befilimu enobunzima boxinzelelo kwi-wafer; I-S12: ukufakelwa kwe-ion kusetyenziswa kumphezulu wangaphambili we-wafer, imichilo ye-piezoresistive yenziwe yinkqubo yokusasazwa kobushushu obuphezulu, kwaye imimandla yoqhagamshelwano ilawulwa kakhulu; I-S13: ukubeka kunye nokwenza umaleko okhuselayo kwindawo yangaphambili ye-wafer; I-S14: ukukrola kunye nokwenza umngxuma onzulu woxinzelelo ngasemva kwe-wafer ukwenza ifilimu enoxinzelelo. 3. Indlela yokuvelisa inzwa yoxinzelelo ngokwebango le-1, apho i-wafer yi-SOI.

Ngowe-1962, uTufte et al. yenze inzwa yoxinzelelo lwe-piezoresistive enemicu ye-silicon piezoresistive kunye nesakhiwo sefilimu yesilicon okokuqala ngqa, kwaye yaqala uphando kwinzwa yoxinzelelo lwepiezoresistive. Ngasekupheleni kweminyaka yee-1960s nakwiminyaka yokuqala yee-1970, ukubonakala kweetekhnoloji ezintathu, ezizezi, iteknoloji yesilicon anisotropic etching, itekhnoloji yokufakelwa kwe-ion kunye nobuchwepheshe bokudibanisa i-anodic, kwazisa utshintsho olukhulu kwinzwa yoxinzelelo, eyadlala indima ebalulekileyo ekuphuculeni ukusebenza kwesivamvo soxinzelelo. . Ukusukela ngo-1980s, ngophuhliso olongezelelweyo lwetekhnoloji ye-micromachining, efana ne-anisotropic etching, i-lithography, i-diffusion doping, i-ion implantation, i-bonding kunye ne-coating, ubungakanani benzwa yoxinzelelo buye bancitshiswa ngokuqhubekayo, uvakalelo luye lwaphuculwa, kwaye umphumo uphezulu kwaye ukusebenza kuhle kakhulu. Ngelo xesha, uphuhliso kunye nokusetyenziswa kweteknoloji entsha ye-micromachining yenza ukuba ubukhulu befilimu ye-sensor yoxinzelelo ilawulwa ngokuchanekileyo.